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GT60J322 Datasheet, Toshiba Semiconductor

GT60J322 igbt equivalent, silicon n-channel igbt.

GT60J322 Avg. rating / M : 1.0 rating-11

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GT60J322 Datasheet

Application

Unit: mm
*
* Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (.

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GT60J322 Page 1 GT60J322 Page 2 GT60J322 Page 3

TAGS
GT60J322
Silicon
N-Channel
IGBT
GT60J321
GT60J323
GT60J323H
Toshiba Semiconductor
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